CSD18502Q5B Texas Instruments
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.83 EUR |
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Technische Details CSD18502Q5B Texas Instruments
Description: MOSFET N-CH 40V 26A/100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V.
Weitere Produktangebote CSD18502Q5B nach Preis ab 1.83 EUR bis 6.08 EUR
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CSD18502Q5B | Hersteller : Texas Instruments |
 Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18502Q5B | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 26A/100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD18502Q5B | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 26A/100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V |
auf Bestellung 3769 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD18502Q5B | Hersteller : Texas Instruments |
MOSFET 40-V N-Ch NexFET Pwr MOSFET |
auf Bestellung 7433 Stücke: Lieferzeit 14-28 Tag (e) |
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| CSD18502Q5B | Hersteller : TI |
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auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD18502Q5B | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD18502Q5B | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD18502Q5B | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |