CSD18502Q5B Texas Instruments
| Anzahl | Preis |
|---|---|
| 1+ | 5.14 EUR |
| 10+ | 3.36 EUR |
| 100+ | 2.6 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 2.04 EUR |
| 2500+ | 1.8 EUR |
| 10000+ | 1.78 EUR |
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Technische Details CSD18502Q5B Texas Instruments
Description: MOSFET N-CH 40V 26A/100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V.
Weitere Produktangebote CSD18502Q5B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| CSD18502Q5B | Hersteller : Texas Instruments |
 N-канальний ПТ, Udss, В = 40, Id = 100 А, Ciss, пФ @ Uds, В = 5070 @ 20, Qg, нКл = 68 @ 10, Rds = 2,3 @ 30 А, 10 В мОм, Ugs(th) = 2,2 В, Р, Вт = 156, Тексп, °C = -55...+150, Тип монт. = SMD,... Група товару: Транзистори Корпус: PowerTDFN-8 Од. вим: штAnzahl je Verpackung: 2500 Stücke |
verfügbar 3 Stücke: |
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| CSD18502Q5B | Hersteller : TI |
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auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD18502Q5B | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
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CSD18502Q5B | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
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CSD18502Q5B | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 26A/100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V |
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CSD18502Q5B | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 26A/100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V |
Produkt ist nicht verfügbar |