CSD18502Q5BT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V
| Anzahl | Privatkunde |
|---|---|
| 250+ | 3.17 EUR |
| 500+ | 2.93 EUR |
| 750+ | 2.8 EUR |
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Technische Details CSD18502Q5BT Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V, Power Dissipation (Max): 3.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V.
Weitere Produktangebote CSD18502Q5BT nach Preis ab 2 EUR bis 8.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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CSD18502Q5BT | Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18502Q5BT | Texas Instruments |
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18502Q5BT | Texas Instruments |
MOSFETs 40-V N channel NexF ET power MOSFET si A A 595-CSD18502Q5B |
auf Bestellung 131 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18502Q5BT | Texas Instruments |
Description: MOSFET N-CH 40V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V |
auf Bestellung 1201 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD18502Q5BT |
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Hersteller: Texas Instruments
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 3.52 EUR |
| 59+ | 2.87 EUR |
| 100+ | 2.11 EUR |
| CSD18502Q5BT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R
Trans MOSFET N-CH Si 40V 26A 8-Pin VSON-CLIP EP T/R
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 3.59 EUR |
| 58+ | 2.8 EUR |
| 100+ | 2 EUR |
| CSD18502Q5BT |
|
Hersteller: Texas Instruments
MOSFETs 40-V N channel NexF ET power MOSFET si A A 595-CSD18502Q5B
MOSFETs 40-V N channel NexF ET power MOSFET si A A 595-CSD18502Q5B
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.52 EUR |
| 10+ | 4.96 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.98 EUR |
| CSD18502Q5BT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V
Description: MOSFET N-CH 40V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 20 V
auf Bestellung 1201 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.21 EUR |
| 10+ | 5.4 EUR |
| 100+ | 3.81 EUR |