Technische Details CSD18503Q5A Texas Instruments
Description: MOSFET N-CH 40V 19A/100A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 120W (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD18503Q5A nach Preis ab 0.74 EUR bis 3.47 EUR
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CSD18503Q5A | Texas Instruments |
 Transistor N-Channel MOSFET; 40V; 20V; 6,2mOhm; 121A; 120W; -55°C ~ 150°C; CSD18503Q5AT CSD18503Q5A TCSD18503q5aAnzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18503Q5A | Texas Instruments |
Description: MOSFET N-CH 40V 19A/100A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 2273 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18503Q5A | Texas Instruments |
MOSFETs 40V N-Channel NexFET Power MOSFET A 595- A 595-CSD18503Q5AT |
auf Bestellung 218 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD18503Q5A | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 40V; 121A; 120W; VSONP8; ESD Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 40V Drain current: 121A Power dissipation: 120W Case: VSONP8 Gate-source voltage: 20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement Version: ESD Gate charge: 32nC |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD18503Q5A |
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Hersteller: Texas Instruments
Transistor N-Channel MOSFET; 40V; 20V; 6,2mOhm; 121A; 120W; -55°C ~ 150°C; CSD18503Q5AT CSD18503Q5A TCSD18503q5a
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 40V; 20V; 6,2mOhm; 121A; 120W; -55°C ~ 150°C; CSD18503Q5AT CSD18503Q5A TCSD18503q5a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 2.6 EUR |
| CSD18503Q5A |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 19A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 19A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.96 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.11 EUR |
| CSD18503Q5A |
|
Hersteller: Texas Instruments
MOSFETs 40V N-Channel NexFET Power MOSFET A 595- A 595-CSD18503Q5AT
MOSFETs 40V N-Channel NexFET Power MOSFET A 595- A 595-CSD18503Q5AT
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.47 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.1 EUR |
| 2500+ | 1 EUR |
| CSD18503Q5A |
|
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 121A; 120W; VSONP8; ESD
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 121A
Power dissipation: 120W
Case: VSONP8
Gate-source voltage: 20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 32nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 121A; 120W; VSONP8; ESD
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 121A
Power dissipation: 120W
Case: VSONP8
Gate-source voltage: 20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 32nC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.74 EUR |