Technische Details CSD18503Q5A Texas Instruments
Description: TEXAS INSTRUMENTS - CSD18503Q5A - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0034 ohm, VSON, Oberflächenmontage, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40, Dauer-Drainstrom Id: 100, Qualifikation: -, MSL: MSL 1 - unbegrenzt, Verlustleistung Pd: 120, Gate-Source-Schwellenspannung, max.: 1.8, Verlustleistung: 120, Bauform - Transistor: VSON, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0034, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0034, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote CSD18503Q5A nach Preis ab 1.19 EUR bis 4.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD18503Q5A | Texas Instruments |
 Description: MOSFET N-CH 40V 19A/100A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
CSD18503Q5A | Texas Instruments |
Transistor N-Channel MOSFET; 40V; 20V; 6,2mOhm; 121A; 120W; -55°C ~ 150°C; CSD18503Q5AT CSD18503Q5A TCSD18503q5a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
 |
CSD18503Q5A | Texas Instruments |
MOSFETs 40V N-Channel NexFET Power MOSFET A 595- A 595-CSD18503Q5AT |
auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
CSD18503Q5A | Texas Instruments |
Description: MOSFET N-CH 40V 19A/100A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 3800 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD18503Q5A |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 19A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 19A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.2 EUR |
| CSD18503Q5A |
|
Hersteller: Texas Instruments
Transistor N-Channel MOSFET; 40V; 20V; 6,2mOhm; 121A; 120W; -55°C ~ 150°C; CSD18503Q5AT CSD18503Q5A TCSD18503q5a
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 40V; 20V; 6,2mOhm; 121A; 120W; -55°C ~ 150°C; CSD18503Q5AT CSD18503Q5A TCSD18503q5a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.96 EUR |
| CSD18503Q5A |
|
Hersteller: Texas Instruments
MOSFETs 40V N-Channel NexFET Power MOSFET A 595- A 595-CSD18503Q5AT
MOSFETs 40V N-Channel NexFET Power MOSFET A 595- A 595-CSD18503Q5AT
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.13 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.31 EUR |
| 2500+ | 1.19 EUR |
| CSD18503Q5A |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 19A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 19A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.19 EUR |
| 10+ | 2.68 EUR |
| 50+ | 2.02 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.45 EUR |