
CSD18503Q5AT Texas Instruments
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
250+ | 1.23 EUR |
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Technische Details CSD18503Q5AT Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V, Power Dissipation (Max): 3.1W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V.
Weitere Produktangebote CSD18503Q5AT nach Preis ab 0.94 EUR bis 4.12 EUR
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CSD18503Q5AT | Hersteller : Texas Instruments |
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auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18503Q5AT | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18503Q5AT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 120W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 640 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18503Q5AT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 120W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm |
auf Bestellung 640 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18503Q5AT | Hersteller : Texas Instruments |
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auf Bestellung 465 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18503Q5AT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V |
auf Bestellung 349 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18503Q5AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18503Q5AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18503Q5AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18503Q5AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |