CSD18503Q5AT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18503Q5AT Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V, Power Dissipation (Max): 3.1W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V.
Weitere Produktangebote CSD18503Q5AT nach Preis ab 1.37 EUR bis 4.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD18503Q5AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 120W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC Dimensions: 5x6mm |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
CSD18503Q5AT | Texas Instruments |
MOSFETs 40V CSD18503Q5A 8-VS ONP A 595-CSD18503Q A 595-CSD18503Q5A |
auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
CSD18503Q5AT | Texas Instruments |
Description: MOSFET N-CH 40V 100A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 349 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD18503Q5AT |
|
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 120W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Dimensions: 5x6mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 120W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Dimensions: 5x6mm
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.75 EUR |
| 41+ | 1.77 EUR |
| CSD18503Q5AT |
|
Hersteller: Texas Instruments
MOSFETs 40V CSD18503Q5A 8-VS ONP A 595-CSD18503Q A 595-CSD18503Q5A
MOSFETs 40V CSD18503Q5A 8-VS ONP A 595-CSD18503Q A 595-CSD18503Q5A
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.08 EUR |
| 10+ | 2.66 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.37 EUR |
| CSD18503Q5AT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.12 EUR |
| 10+ | 2.65 EUR |
| 100+ | 1.81 EUR |