CSD18503Q5AT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.18 EUR |
| 10+ | 3.34 EUR |
| 50+ | 2.56 EUR |
| 100+ | 2.3 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18503Q5AT Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 22A, 10V, Power Dissipation (Max): 3.1W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 20 V.
Weitere Produktangebote CSD18503Q5AT nach Preis ab 1.69 EUR bis 5.21 EUR
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CSD18503Q5AT | Texas Instruments |
MOSFETs 40V CSD18503Q5A 8-VS ONP A 595-CSD18503Q A 595-CSD18503Q5A |
auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18503Q5AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm Dimensions: 5x6mm Kind of package: reel; tape Case: VSONP8 On-state resistance: 4.7mΩ Mounting: SMD Power dissipation: 120W Gate charge: 13nC Polarisation: unipolar Technology: NexFET™ Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD18503Q5AT |
|
Hersteller: Texas Instruments
MOSFETs 40V CSD18503Q5A 8-VS ONP A 595-CSD18503Q A 595-CSD18503Q5A
MOSFETs 40V CSD18503Q5A 8-VS ONP A 595-CSD18503Q A 595-CSD18503Q5A
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.21 EUR |
| 10+ | 2.57 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.71 EUR |
| 2500+ | 1.69 EUR |
| CSD18503Q5AT |
|
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm
Dimensions: 5x6mm
Kind of package: reel; tape
Case: VSONP8
On-state resistance: 4.7mΩ
Mounting: SMD
Power dissipation: 120W
Gate charge: 13nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8; 5x6mm
Dimensions: 5x6mm
Kind of package: reel; tape
Case: VSONP8
On-state resistance: 4.7mΩ
Mounting: SMD
Power dissipation: 120W
Gate charge: 13nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)