CSD18509Q5B Texas Instruments
| Anzahl | Preis |
|---|---|
| 1+ | 4.96 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.76 EUR |
| 2500+ | 1.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18509Q5B Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 13900 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSON-CLIP (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 195W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 32A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD18509Q5B nach Preis ab 1.76 EUR bis 10.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD18509Q5B | Texas Instruments |
 Description: MOSFET N-CH 40V 100A 8VSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 32A, 10V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13900 pF @ 20 V |
auf Bestellung 4375 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
CSD18509Q5B | Texas Instruments |
MOSFET N-CH 40V 100A 8VSON Транзистори |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
|
| CSD18509Q5B |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 32A, 10V
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13900 pF @ 20 V
Description: MOSFET N-CH 40V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 32A, 10V
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13900 pF @ 20 V
auf Bestellung 4375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.24 EUR |
| 10+ | 3.4 EUR |
| 100+ | 2.36 EUR |
| 500+ | 1.91 EUR |
| 1000+ | 1.76 EUR |
| CSD18509Q5B |
|
Hersteller: Texas Instruments
MOSFET N-CH 40V 100A 8VSON Транзистори
MOSFET N-CH 40V 100A 8VSON Транзистори
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.17 EUR |