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CSD18510KTTT

CSD18510KTTT Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 274A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+2.75 EUR
100+2.37 EUR
150+2.26 EUR
250+2.23 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD18510KTTT Texas Instruments

Description: MOSFET N-CH 40V 274A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 274A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V.

Weitere Produktangebote CSD18510KTTT nach Preis ab 2.3 EUR bis 6.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD18510KTTT CSD18510KTTT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 119nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 200A
Power dissipation: 250W
Pulsed drain current: 400A
Case: D2PAK
Kind of channel: enhancement
Technology: NexFET™
Type of transistor: N-MOSFET
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.32 EUR
32+2.3 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KTTT CSD18510KTTT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt Description: MOSFET N-CH 40V 274A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.44 EUR
10+2.75 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KTTT CSD18510KTTT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt MOSFETs 40V N-Channel NexFET Power MOSFET A 595-CSD18510KTT
auf Bestellung 427 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.23 EUR
10+2.71 EUR
100+2.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt
CSD18510KTTT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 119nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 200A
Power dissipation: 250W
Pulsed drain current: 400A
Case: D2PAK
Kind of channel: enhancement
Technology: NexFET™
Type of transistor: N-MOSFET
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
17+4.32 EUR
32+2.3 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt
CSD18510KTTT
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 274A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V
auf Bestellung 308 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.44 EUR
10+2.75 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18510KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18510ktt
CSD18510KTTT
Hersteller: Texas Instruments
MOSFETs 40V N-Channel NexFET Power MOSFET A 595-CSD18510KTT
auf Bestellung 427 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+6.23 EUR
10+2.71 EUR
100+2.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH