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CSD18514Q5AT

CSD18514Q5AT Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18514q5a
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 89A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+1.3 EUR
500+1.19 EUR
750+1.13 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD18514Q5AT Texas Instruments

Description: MOSFET N-CH 40V 89A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V.

Weitere Produktangebote CSD18514Q5AT nach Preis ab 1 EUR bis 3.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD18514Q5AT CSD18514Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18514q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 74W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 74W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29nC
Dimensions: 5x6mm
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
51+1.42 EUR
57+1.26 EUR
100+1.13 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18514Q5AT CSD18514Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18514q5a MOSFETs 40V N-Channel NexFET Power MOSFET A 595- A 595-CSD18514Q5A
auf Bestellung 19126 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.24 EUR
10+2.09 EUR
100+1.12 EUR
500+1.04 EUR
1000+1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18514Q5AT CSD18514Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18514q5a Description: MOSFET N-CH 40V 89A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
auf Bestellung 1041 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
10+2.19 EUR
100+1.49 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18514Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18514q5a
CSD18514Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 74W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 74W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29nC
Dimensions: 5x6mm
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
38+1.89 EUR
51+1.42 EUR
57+1.26 EUR
100+1.13 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18514Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18514q5a
CSD18514Q5AT
Hersteller: Texas Instruments
MOSFETs 40V N-Channel NexFET Power MOSFET A 595- A 595-CSD18514Q5A
auf Bestellung 19126 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.24 EUR
10+2.09 EUR
100+1.12 EUR
500+1.04 EUR
1000+1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18514Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18514q5a
CSD18514Q5AT
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 89A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
auf Bestellung 1041 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.43 EUR
10+2.19 EUR
100+1.49 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH