CSD18533Q5AT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 17A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
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Technische Details CSD18533Q5AT Texas Instruments
Description: MOSFET N-CH 60V 17A/100A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 116W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN.
Weitere Produktangebote CSD18533Q5AT nach Preis ab 1.17 EUR bis 3.63 EUR
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CSD18533Q5AT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 116W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 29nC Dimensions: 5x6mm |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18533Q5AT | Texas Instruments |
Description: MOSFET N-CH 60V 17A/100A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.2W (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Mounting Type: Surface Mount |
auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18533Q5AT | Texas Instruments |
MOSFETs 60V N-channel NexFET Power MOSFET A 595- A 595-CSD18533Q5A |
auf Bestellung 406 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD18533Q5AT |
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Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29nC
Dimensions: 5x6mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29nC
Dimensions: 5x6mm
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 38+ | 1.9 EUR |
| 43+ | 1.67 EUR |
| 100+ | 1.19 EUR |
| CSD18533Q5AT |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 17A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Description: MOSFET N-CH 60V 17A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.34 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.59 EUR |
| CSD18533Q5AT |
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Hersteller: Texas Instruments
MOSFETs 60V N-channel NexFET Power MOSFET A 595- A 595-CSD18533Q5A
MOSFETs 60V N-channel NexFET Power MOSFET A 595- A 595-CSD18533Q5A
auf Bestellung 406 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.63 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.17 EUR |