CSD18533Q5AT TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
auf Bestellung 1109 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
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Technische Details CSD18533Q5AT TEXAS INSTRUMENTS
Description: MOSFET N-CH 60V 17A/100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 18A, 10V, Power Dissipation (Max): 3.2W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 30 V.
Weitere Produktangebote CSD18533Q5AT nach Preis ab 1.06 EUR bis 3.63 EUR
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CSD18533Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 116W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1109 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18533Q5AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 17A/100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 18A, 10V Power Dissipation (Max): 3.2W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 30 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18533Q5AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 17A/100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 18A, 10V Power Dissipation (Max): 3.2W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 30 V |
auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18533Q5AT | Hersteller : Texas Instruments |
MOSFETs 60V N-channel NexFET Power MOSFET A 595-CSD18533Q5A |
auf Bestellung 583 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18533Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 17A 8-Pin VSONP EP T/R |
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CSD18533Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 17A 8-Pin VSONP EP T/R |
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CSD18533Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 17A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD18533Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 17A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |