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CSD18534Q5AT

CSD18534Q5AT Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a
Hersteller: Texas Instruments
Description: MOSFET N-CHANNEL 60V 50A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 30 V
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+1.41 EUR
500+1.29 EUR
750+1.22 EUR
1250+1.15 EUR
1750+1.11 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD18534Q5AT Texas Instruments

Description: MOSFET N-CHANNEL 60V 50A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 14A, 10V, Power Dissipation (Max): 3.1W (Ta), 77W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 30 V.

Weitere Produktangebote CSD18534Q5AT nach Preis ab 1.17 EUR bis 3.66 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD18534Q5AT CSD18534Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 77W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 77W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Dimensions: 5x6mm
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
36+2.02 EUR
42+1.73 EUR
48+1.5 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18534Q5AT CSD18534Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a MOSFETs 60V N-Ch NexFET Pwr MOSFET A 595-CSD1853 A 595-CSD18534Q5A
auf Bestellung 4694 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.64 EUR
10+2.34 EUR
100+1.4 EUR
500+1.22 EUR
1000+1.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18534Q5AT CSD18534Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a Description: MOSFET N-CHANNEL 60V 50A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 14A, 10V
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.66 EUR
10+2.35 EUR
100+1.61 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18534Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a
CSD18534Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 77W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 77W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Dimensions: 5x6mm
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
30+2.45 EUR
36+2.02 EUR
42+1.73 EUR
48+1.5 EUR
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18534Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a
CSD18534Q5AT
Hersteller: Texas Instruments
MOSFETs 60V N-Ch NexFET Pwr MOSFET A 595-CSD1853 A 595-CSD18534Q5A
auf Bestellung 4694 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.64 EUR
10+2.34 EUR
100+1.4 EUR
500+1.22 EUR
1000+1.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18534Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18534q5a
CSD18534Q5AT
Hersteller: Texas Instruments
Description: MOSFET N-CHANNEL 60V 50A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 14A, 10V
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.66 EUR
10+2.35 EUR
100+1.61 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH