
CSD18541F5T Texas Instruments
auf Bestellung 3250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
275+ | 0.54 EUR |
500+ | 0.49 EUR |
750+ | 0.45 EUR |
1250+ | 0.43 EUR |
1750+ | 0.41 EUR |
2500+ | 0.39 EUR |
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Technische Details CSD18541F5T Texas Instruments
Description: MOSFET N-CH 60V 2.2A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V.
Weitere Produktangebote CSD18541F5T nach Preis ab 0.58 EUR bis 1.97 EUR
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CSD18541F5T | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V |
auf Bestellung 21500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18541F5T | Hersteller : Texas Instruments |
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auf Bestellung 2606 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18541F5T | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V |
auf Bestellung 21639 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18541F5T | Hersteller : Texas Instruments |
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auf Bestellung 3750 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18541F5T | Hersteller : Texas Instruments |
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CSD18541F5T | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18541F5T | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18541F5T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.2A; Idm: 21A; 500mW Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Power dissipation: 0.5W Case: PICOSTAR3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 21A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18541F5T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.2A; Idm: 21A; 500mW Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Power dissipation: 0.5W Case: PICOSTAR3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 21A |
Produkt ist nicht verfügbar |