CSD18563Q5A Texas Instruments
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.81 EUR |
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Technische Details CSD18563Q5A Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V, Power Dissipation (Max): 3.2W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V.
Weitere Produktangebote CSD18563Q5A nach Preis ab 0.76 EUR bis 2.96 EUR
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CSD18563Q5A | Hersteller : Texas Instruments |
 Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18563Q5A | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V Power Dissipation (Max): 3.2W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V |
auf Bestellung 47500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18563Q5A | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V Power Dissipation (Max): 3.2W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V |
auf Bestellung 49647 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18563Q5A | Hersteller : Texas Instruments |
MOSFET 60V N-Channel NexFET Power MOSFET |
auf Bestellung 7095 Stücke: Lieferzeit 14-28 Tag (e) |
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CSD18563Q5A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18563Q5A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD18563Q5A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD18563Q5A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |