CSD19502Q5BT Texas Instruments
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.71 EUR |
| 500+ | 1.64 EUR |
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Technische Details CSD19502Q5BT Texas Instruments
Description: MOSFET N-CH 80V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V, Power Dissipation (Max): 3.1W (Ta), 195W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V.
Weitere Produktangebote CSD19502Q5BT nach Preis ab 1.88 EUR bis 5.28 EUR
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CSD19502Q5BT | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 80V 100A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V |
auf Bestellung 7750 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19502Q5BT | Hersteller : Texas Instruments |
MOSFETs N-Channel 3.4mOhm 8 0V A 595-CSD19502Q5B |
auf Bestellung 2393 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19502Q5BT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 80V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V |
auf Bestellung 7932 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19502Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 8-Pin VSON-CLIP EP T/R |
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CSD19502Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD19502Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |