CSD19506KTTT Texas Instruments

Description: MOSFET N-CH 80V 200A DDPAK, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-263 (DDPAK-3), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 40 V.