CSD19531KCS Texas Instruments
| Anzahl | Privatkunde |
|---|---|
| 60+ | 2.93 EUR |
| 100+ | 2.19 EUR |
| 500+ | 1.71 EUR |
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Technische Details CSD19531KCS Texas Instruments
Description: MOSFET N-CH 100V 100A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote CSD19531KCS nach Preis ab 1.59 EUR bis 5.11 EUR
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CSD19531KCS | TEXAS INSTRUMENTS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19531KCS | Texas Instruments |
Description: MOSFET N-CH 100V 100A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 905 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19531KCS | Texas Instruments |
MOSFETs 100V 6.4mOhm Pwr MOS FET |
auf Bestellung 1180 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD19531KCS |
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Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 3.25 EUR |
| 30+ | 2.93 EUR |
| 37+ | 2.34 EUR |
| 46+ | 1.89 EUR |
| 50+ | 1.7 EUR |
| CSD19531KCS |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.84 EUR |
| 50+ | 2.37 EUR |
| 100+ | 2.13 EUR |
| 500+ | 1.71 EUR |
| CSD19531KCS |
|
Hersteller: Texas Instruments
MOSFETs 100V 6.4mOhm Pwr MOS FET
MOSFETs 100V 6.4mOhm Pwr MOS FET
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.11 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.39 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.83 EUR |
| 2500+ | 1.63 EUR |
| 5000+ | 1.59 EUR |