CSD19531KCS Texas Instruments
| Anzahl | Privatkunde |
|---|---|
| 60+ | 2.89 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.69 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
60 Stücke
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Technische Details CSD19531KCS Texas Instruments
Description: MOSFET N-CH 100V 100A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote CSD19531KCS nach Preis ab 1.59 EUR bis 5.11 EUR
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CSD19531KCS | Texas Instruments |
 MOSFETs 100V 6.4mOhm Pwr MOS FET |
auf Bestellung 1180 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19531KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD19531KCS |
|
Hersteller: Texas Instruments
MOSFETs 100V 6.4mOhm Pwr MOS FET
MOSFETs 100V 6.4mOhm Pwr MOS FET
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.11 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.39 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.83 EUR |
| 2500+ | 1.63 EUR |
| 5000+ | 1.59 EUR |
| CSD19531KCS |
|
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)