CSD19532KTT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 500+ | 1.84 EUR |
| 1000+ | 1.7 EUR |
| 1500+ | 1.63 EUR |
| 2500+ | 1.55 EUR |
| 3500+ | 1.51 EUR |
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Technische Details CSD19532KTT Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V.
Weitere Produktangebote CSD19532KTT nach Preis ab 1.69 EUR bis 5.1 EUR
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CSD19532KTT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 6.6mΩ Gate-source voltage: ±20V Drain current: 200A Drain-source voltage: 100V Pulsed drain current: 400A Power dissipation: 250W Technology: NexFET™ Kind of channel: enhancement |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19532KTT | Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V |
auf Bestellung 4367 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19532KTT | Texas Instruments |
MOSFETs CSD19532Q5B Pkg spin A 595-CSD19532KTTT A 595-CSD19532KTTT |
auf Bestellung 1277 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 6.6mΩ
Gate-source voltage: ±20V
Drain current: 200A
Drain-source voltage: 100V
Pulsed drain current: 400A
Power dissipation: 250W
Technology: NexFET™
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 6.6mΩ
Gate-source voltage: ±20V
Drain current: 200A
Drain-source voltage: 100V
Pulsed drain current: 400A
Power dissipation: 250W
Technology: NexFET™
Kind of channel: enhancement
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 3.56 EUR |
| 25+ | 2.97 EUR |
| 28+ | 2.65 EUR |
| 32+ | 2.25 EUR |
| 100+ | 1.84 EUR |
| CSD19532KTT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V
Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V
auf Bestellung 4367 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.03 EUR |
| 10+ | 3.28 EUR |
| 100+ | 2.27 EUR |
| CSD19532KTT |
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Hersteller: Texas Instruments
MOSFETs CSD19532Q5B Pkg spin A 595-CSD19532KTTT A 595-CSD19532KTTT
MOSFETs CSD19532Q5B Pkg spin A 595-CSD19532KTTT A 595-CSD19532KTTT
auf Bestellung 1277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.1 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.69 EUR |