Weitere Produktangebote CSD19533KCS Transistor nach Preis ab 1.02 EUR bis 5.43 EUR
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CSD19533KCS | Texas Instruments |
 Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19533KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 188W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 188W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19533KCS | Texas Instruments |
Description: MOSFET N-CH 100V 100A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 55A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.4V @ 250µA |
auf Bestellung 2410 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19533KCS | Texas Instruments |
MOSFETs 100V 8.7mOhm N-CH Pw r MOSFET |
auf Bestellung 1809 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19533KCS | Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CSD19533KCS | Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CSD19533KCS |
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Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.4 EUR |
| 5000+ | 1.32 EUR |
| CSD19533KCS |
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Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 188W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 188W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.7 EUR |
| 54+ | 1.59 EUR |
| 60+ | 1.43 EUR |
| 68+ | 1.26 EUR |
| 74+ | 1.15 EUR |
| 100+ | 1.06 EUR |
| 500+ | 1.02 EUR |
| CSD19533KCS |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Description: MOSFET N-CH 100V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
auf Bestellung 2410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.55 EUR |
| 50+ | 2.23 EUR |
| 100+ | 2 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.48 EUR |
| 2000+ | 1.37 EUR |
| CSD19533KCS |
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Hersteller: Texas Instruments
MOSFETs 100V 8.7mOhm N-CH Pw r MOSFET
MOSFETs 100V 8.7mOhm N-CH Pw r MOSFET
auf Bestellung 1809 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.43 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 1.86 EUR |
| 2500+ | 1.76 EUR |
| CSD19533KCS |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| CSD19533KCS |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)