CSD22204WT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET P-CH 8V 5A 9DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.37 EUR |
| 750+ | 1.18 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
250 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD22204WT Texas Instruments
Description: MOSFET P-CH 8V 5A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 9-DSBGA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V.
Weitere Produktangebote CSD22204WT nach Preis ab 1.06 EUR bis 3.69 EUR
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CSD22204WT | Texas Instruments |
MOSFETs 8-V P-Channel NexFET Power MOSFET A 595- A 595-CSD22204W |
auf Bestellung 134 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD22204WT | Texas Instruments |
Description: MOSFET P-CH 8V 5A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V |
auf Bestellung 4705 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD22204WT |
|
Hersteller: Texas Instruments
MOSFETs 8-V P-Channel NexFET Power MOSFET A 595- A 595-CSD22204W
MOSFETs 8-V P-Channel NexFET Power MOSFET A 595- A 595-CSD22204W
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.62 EUR |
| 10+ | 1.73 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.11 EUR |
| 2500+ | 1.06 EUR |
| CSD22204WT |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 8V 5A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V
Description: MOSFET P-CH 8V 5A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 24.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 4 V
auf Bestellung 4705 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.69 EUR |
| 10+ | 2.34 EUR |
| 50+ | 1.76 EUR |
| 100+ | 1.57 EUR |