CSD23201W10 Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 2.2A 4DSBGA
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 4-DSBGA (1x1)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, DSBGA
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 1211+ | 0.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD23201W10 Texas Instruments
Description: MOSFET P-CH 12V 2.2A 4DSBGA, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): -6V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: 4-DSBGA (1x1), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-UFBGA, DSBGA, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD23201W10 nach Preis ab 0.86 EUR bis 0.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
CSD23201W10 | Hersteller : Texas Instruments |
P-CHANNEL NexFET MOSFET 12V, 7A, 66mohm CSD23201W10 TCSD23201w10 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||
|
|
CSD23201W10 | Hersteller : Texas Instruments |
Description: MOSFET P-CH 12V 2.2A 4DSBGA Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 4-DSBGA (1x1) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, DSBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|||||
|
|
CSD23201W10 | Hersteller : Texas Instruments |
Description: MOSFET P-CH 12V 2.2A 4DSBGA Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 4-DSBGA (1x1) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, DSBGA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |