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CSD23285F5

CSD23285F5 Texas Instruments

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Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 5.4A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR (1.49x0.73)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V
auf Bestellung 1656 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
29+0.62 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD23285F5 Texas Instruments

Description: MOSFET P-CH 12V 5.4A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 3-PICOSTAR (1.49x0.73), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V.

Weitere Produktangebote CSD23285F5 nach Preis ab 0.17 EUR bis 1.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD23285F5 CSD23285F5 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23285f5 MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23285F5T
auf Bestellung 7433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.65 EUR
10+1.14 EUR
100+0.72 EUR
500+0.45 EUR
1000+0.34 EUR
3000+0.29 EUR
6000+0.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CSD23285F5 Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23285f5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 12V; 3.3A; 1.4W; PICOSTAR3
Case: PICOSTAR3
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: 12V
Gate-source voltage: -6V
Drain current: 3.3A
Power dissipation: 1.4W
Kind of channel: enhancement
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CSD23285F5 CSD23285F5 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23285f5 Description: MOSFET P-CH 12V 5.4A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR (1.49x0.73)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V
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Im Einkaufswagen  Stück im Wert von  UAH