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CSD23285F5T

CSD23285F5T Texas Instruments

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Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 5.4A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR (1.49x0.73)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+0.9 EUR
500+0.82 EUR
750+0.77 EUR
1250+0.73 EUR
1750+0.7 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD23285F5T Texas Instruments

Description: MOSFET P-CH 12V 5.4A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 3-PICOSTAR (1.49x0.73), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V.

Weitere Produktangebote CSD23285F5T nach Preis ab 0.68 EUR bis 2.5 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD23285F5T CSD23285F5T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23285f5 Description: MOSFET P-CH 12V 5.4A 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR (1.49x0.73)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V
auf Bestellung 2018 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
CSD23285F5T CSD23285F5T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23285f5 MOSFETs -12-V P channel Nex FET power MOSFET s A A 595-CSD23285F5
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.5 EUR
10+1.59 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.7 EUR
2500+0.68 EUR
Mindestbestellmenge: 2
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CSD23285F5T Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd23285f5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.4A; Idm: -31A; 1.4W
Case: PICOSTAR3
Technology: NexFET™
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -31A
Drain-source voltage: -12V
Gate-source voltage: ±6V
Drain current: -5.4A
On-state resistance: 0.13Ω
Power dissipation: 1.4W
Kind of channel: enhancement
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