CSD23285F5T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 12V 5.4A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.93 EUR |
| 500+ | 0.80 EUR |
| 750+ | 0.76 EUR |
| 1250+ | 0.70 EUR |
| 1750+ | 0.69 EUR |
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Technische Details CSD23285F5T Texas Instruments
Description: MOSFET P-CH 12V 5.4A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V.
Weitere Produktangebote CSD23285F5T nach Preis ab 0.62 EUR bis 2.02 EUR
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CSD23285F5T | Hersteller : Texas Instruments |
MOSFET -12-V, P channel NexFET power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
auf Bestellung 1271 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23285F5T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 12V 5.4A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V |
auf Bestellung 2674 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23285F5T | Hersteller : Texas Instruments |
Trans MOSFET P-CH 12V 5.4A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
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| CSD23285F5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.4A; Idm: -31A; 1.4W Case: PICOSTAR3 Drain-source voltage: -12V Drain current: -5.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: -31A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD23285F5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.4A; Idm: -31A; 1.4W Case: PICOSTAR3 Drain-source voltage: -12V Drain current: -5.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±6V Pulsed drain current: -31A Mounting: SMD |
Produkt ist nicht verfügbar |