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Technische Details CSD23382F4T Texas Instruments
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V.
Weitere Produktangebote CSD23382F4T nach Preis ab 0.56 EUR bis 0.62 EUR
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CSD23382F4T | Texas Instruments |
 Description: MOSFET P-CH 12V 3.5A 3PICOSTARPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23382F4T | Texas Instruments |
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V |
auf Bestellung 1148 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23382F4T | Texas Instruments |
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Bulk |
auf Bestellung 1604 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.57 EUR |
| 750+ | 0.56 EUR |
| CSD23382F4T |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
auf Bestellung 1148 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 0.59 EUR |
| 100+ | 0.57 EUR |
| CSD23382F4T |
|
Hersteller: Texas Instruments
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
auf Bestellung 1604 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 802+ | 0.62 EUR |