auf Bestellung 5618 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.57 EUR |
| 100+ | 0.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD23382F4T Texas Instruments
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V.
Weitere Produktangebote CSD23382F4T nach Preis ab 0.56 EUR bis 0.62 EUR
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CSD23382F4T | Hersteller : Texas Instruments |
 Description: MOSFET P-CH 12V 3.5A 3PICOSTARPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23382F4T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V |
auf Bestellung 1148 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23382F4T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V |
auf Bestellung 1604 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD23382F4T | Hersteller : Texas Instruments |
Trans MOSFET P-CH 12V 3.5A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
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| CSD23382F4T | Hersteller : TEXAS INSTRUMENTS |
CSD23382F4T SMD P channel transistors |
Produkt ist nicht verfügbar |