CSD25303W1015 Texas Instruments

Description: MOSFET P-CH 20V 3A 6DSBGA, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-DSBGA (1x1.5), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 58mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UFBGA, DSBGA, Packaging: Tape & Reel (TR).