CSD25304W1015T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 20V 3A 6DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.97 EUR |
| 500+ | 0.80 EUR |
| 750+ | 0.76 EUR |
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Technische Details CSD25304W1015T Texas Instruments
Description: MOSFET P-CH 20V 3A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1.15V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V.
Weitere Produktangebote CSD25304W1015T nach Preis ab 0.73 EUR bis 2.66 EUR
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CSD25304W1015T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 3A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V |
auf Bestellung 1457 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25304W1015T | Hersteller : Texas Instruments |
MOSFETs 20V P-Ch NexFET A 595-CSD25304W1015 |
auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25304W1015T | Hersteller : Texas Instruments |
Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R |
Produkt ist nicht verfügbar |
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| CSD25304W1015T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -41A; 0.75W; DSBGA6 On-state resistance: 92mΩ Type of transistor: P-MOSFET Power dissipation: 0.75W Polarisation: unipolar Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -41A Mounting: SMD Case: DSBGA6 Drain-source voltage: -20V Drain current: -3A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD25304W1015T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -41A; 0.75W; DSBGA6 On-state resistance: 92mΩ Type of transistor: P-MOSFET Power dissipation: 0.75W Polarisation: unipolar Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -41A Mounting: SMD Case: DSBGA6 Drain-source voltage: -20V Drain current: -3A |
Produkt ist nicht verfügbar |