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CSD25304W1015T

CSD25304W1015T Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25304w1015 Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 3A 6DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+1.02 EUR
500+0.84 EUR
750+0.80 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD25304W1015T Texas Instruments

Description: MOSFET P-CH 20V 3A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1.15V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V.

Weitere Produktangebote CSD25304W1015T nach Preis ab 0.71 EUR bis 2.60 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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CSD25304W1015T CSD25304W1015T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25304w1015 MOSFETs 20V P-Ch NexFET
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.16 EUR
10+1.49 EUR
100+0.92 EUR
500+0.80 EUR
1000+0.73 EUR
2500+0.71 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CSD25304W1015T CSD25304W1015T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25304w1015 Description: MOSFET P-CH 20V 3A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
auf Bestellung 1457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
11+1.72 EUR
100+1.17 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CSD25304W1015T CSD25304W1015T Hersteller : Texas Instruments getliterature.pdf Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R
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CSD25304W1015T Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25304w1015 CSD25304W1015T SMD P channel transistors
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