CSD25402Q3AT Texas Instruments
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 1.02 EUR |
| 500+ | 0.85 EUR |
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Produktbewertung abgeben
Technische Details CSD25402Q3AT Texas Instruments
Description: MOSFET P-CH 20V 15A/76A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 1.15V @ 250µA, Supplier Device Package: 8-VSONP (3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 10 V.
Weitere Produktangebote CSD25402Q3AT nach Preis ab 0.85 EUR bis 2.65 EUR
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CSD25402Q3AT | Hersteller : Texas Instruments |
 Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD25402Q3AT | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 15A/76A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 10 V |
auf Bestellung 7750 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD25402Q3AT | Hersteller : Texas Instruments |
MOSFET -20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm 8-VSONP -55 to 150 |
auf Bestellung 12652 Stücke: Lieferzeit 14-28 Tag (e) |
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CSD25402Q3AT | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 15A/76A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 10 V |
auf Bestellung 8174 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD25402Q3AT | Hersteller : Texas Instruments |
Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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| CSD25402Q3AT | Hersteller : Texas Instruments |
Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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| CSD25402Q3AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -148A; 69W; VSONP8 Case: VSONP8 Mounting: SMD On-state resistance: 0.3Ω Kind of package: reel; tape Application: automotive industry Technology: NexFET™ Pulsed drain current: -148A Drain-source voltage: -20V Drain current: -35A Type of transistor: P-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD25402Q3AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -148A; 69W; VSONP8 Case: VSONP8 Mounting: SMD On-state resistance: 0.3Ω Kind of package: reel; tape Application: automotive industry Technology: NexFET™ Pulsed drain current: -148A Drain-source voltage: -20V Drain current: -35A Type of transistor: P-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |