Produkte > TEXAS INSTRUMENTS > CSD25485F5T

CSD25485F5T Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25485f5
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 5.3A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+0.68 EUR
500+0.62 EUR
750+0.61 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details CSD25485F5T Texas Instruments

Description: MOSFET P-CH 20V 5.3A 3PICOSTAR, Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): -12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Supplier Device Package: 3-PICOSTAR, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote CSD25485F5T nach Preis ab 0.62 EUR bis 1.9 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD25485F5T CSD25485F5T Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25485f5 MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
auf Bestellung 469 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.59 EUR
10+1.3 EUR
100+1 EUR
500+0.86 EUR
1000+0.7 EUR
2500+0.66 EUR
5000+0.62 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD25485F5T CSD25485F5T Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25485f5 Description: MOSFET P-CH 20V 5.3A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 2217 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.9 EUR
13+1.39 EUR
100+0.69 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD25485F5T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25485f5
Hersteller: Texas Instruments
MOSFET -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
auf Bestellung 469 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.59 EUR
10+1.3 EUR
100+1 EUR
500+0.86 EUR
1000+0.7 EUR
2500+0.66 EUR
5000+0.62 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD25485F5T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd25485f5
Hersteller: Texas Instruments
Description: MOSFET P-CH 20V 5.3A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 533 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 900mA, 8V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 2217 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.9 EUR
13+1.39 EUR
100+0.69 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH