CSD25501F3T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET P-CH 20V 3.6A 3LGA
Packaging: Tape & Reel (TR)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: 3-LGA (0.73x0.64)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): -20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V
auf Bestellung 14500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.88 EUR |
| 500+ | 0.75 EUR |
| 1250+ | 0.61 EUR |
| 2500+ | 0.58 EUR |
| 6250+ | 0.55 EUR |
| 12500+ | 0.52 EUR |
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Technische Details CSD25501F3T Texas Instruments
Description: MOSFET P-CH 20V 3.6A 3LGA, Packaging: Tape & Reel (TR), Package / Case: 3-XFLGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: 3-LGA (0.73x0.64), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): -20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V.
Weitere Produktangebote CSD25501F3T nach Preis ab 0.55 EUR bis 1.39 EUR
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MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
auf Bestellung 793 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25501F3T | Hersteller : Texas Instruments |
Description: MOSFET P-CH 20V 3.6A 3LGA Packaging: Cut Tape (CT) Package / Case: 3-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 3-LGA (0.73x0.64) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V |
auf Bestellung 15236 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD25501F3T | Hersteller : Texas Instruments |
Trans MOSFET P-CH 20V 3.6A 3-Pin LGA T/R |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD25501F3T | Hersteller : Texas Instruments |
Trans MOSFET P-CH 20V 3.6A 3-Pin LGA T/R |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD25501F3T | Hersteller : Texas Instruments |
Trans MOSFET P-CH 20V 3.6A 3-Pin LGA T/R |
Produkt ist nicht verfügbar |
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CSD25501F3T | Hersteller : Texas Instruments |
Trans MOSFET P-CH 20V 3.6A 3-Pin LGA T/R |
Produkt ist nicht verfügbar |
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| CSD25501F3T | Hersteller : TEXAS INSTRUMENTS |
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