| Anzahl | Preis |
|---|---|
| 2+ | 1.5 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.43 EUR |
| 3000+ | 0.37 EUR |
| 6000+ | 0.33 EUR |
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Technische Details CSD75207W15 Texas Instruments
Description: MOSFET 2P-CH 3.9A 9DSBGA, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, DSBGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Current - Continuous Drain (Id) @ 25°C: 3.9A, Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V, Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V, Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 9-DSBGA, Part Status: Active.
Weitere Produktangebote CSD75207W15 nach Preis ab 0.48 EUR bis 1.69 EUR
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CSD75207W15 | Texas Instruments |
 Description: MOSFET 2P-CH 3.9A 9DSBGAPackaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Current - Continuous Drain (Id) @ 25°C: 3.9A Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active |
auf Bestellung 1016 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD75207W15 |
|
Hersteller: Texas Instruments
Description: MOSFET 2P-CH 3.9A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
Description: MOSFET 2P-CH 3.9A 9DSBGA
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 1A, 1.8V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 9-DSBGA
Part Status: Active
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.69 EUR |
| 17+ | 1.05 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.48 EUR |