CSD83325L Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Bulk
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
auf Bestellung 361750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 808+ | 0.56 EUR |
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Technische Details CSD83325L Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 12V, Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-PicoStar, Part Status: Active.
Weitere Produktangebote CSD83325L nach Preis ab 0.3 EUR bis 0.73 EUR
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CSD83325L | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 12V 6PICOSTARPackaging: Cut Tape (CT) Package / Case: 6-XFBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-PicoStar Part Status: Active |
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