Technische Details CSD83325LT Texas Instruments
Description: TEXAS INSTRUMENTS - CSD83325LT - Dual-MOSFET, n-Kanal, 12 V, 8 A, 0.0099 ohm, PICOSTAR, Oberflächenmontage, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 12, Dauer-Drainstrom Id: 8, Rds(on)-Messspannung Vgs: 4.5, MSL: MSL 1 - unbegrenzt, Verlustleistung Pd: 2.3, Bauform - Transistor: PICOSTAR, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 6, Produktpalette: -, Wandlerpolarität: n-Kanal, Betriebswiderstand, Rds(on): 0.0099, Betriebstemperatur, max.: 150, Schwellenspannung Vgs: 950, SVHC: No SVHC (17-Jan-2022).
Weitere Produktangebote CSD83325LT nach Preis ab 0.96 EUR bis 2.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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CSD83325LT | Texas Instruments |
Description: MOSFET 2N-CH 12V 6PICOSTARPart Status: Active Supplier Device Package: 6-PicoStar Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Drain to Source Voltage (Vdss): 12V Power - Max: 2.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 6-XFBGA Packaging: Tape & Reel (TR) |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD83325LT | Texas Instruments |
MOSFETs 12-V N channel NexF ET power MOSFET du A A 595-CSD83325L |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD83325LT | Texas Instruments |
Description: MOSFET 2N-CH 12V 6PICOSTARPackaging: Cut Tape (CT) Package / Case: 6-XFBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-PicoStar Part Status: Active |
auf Bestellung 778 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD83325LT |
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Hersteller: Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR
Part Status: Active
Supplier Device Package: 6-PicoStar
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Drain to Source Voltage (Vdss): 12V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 12V 6PICOSTAR
Part Status: Active
Supplier Device Package: 6-PicoStar
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Drain to Source Voltage (Vdss): 12V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA
Packaging: Tape & Reel (TR)
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.13 EUR |
| 500+ | 1.08 EUR |
| 750+ | 1.06 EUR |
| CSD83325LT |
![]() |
Hersteller: Texas Instruments
MOSFETs 12-V N channel NexF ET power MOSFET du A A 595-CSD83325L
MOSFETs 12-V N channel NexF ET power MOSFET du A A 595-CSD83325L
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.98 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.07 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.96 EUR |
| CSD83325LT |
![]() |
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
Description: MOSFET 2N-CH 12V 6PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-PicoStar
Part Status: Active
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 14+ | 1.52 EUR |
| 25+ | 1.37 EUR |
| 100+ | 1.21 EUR |




