CSD86350Q5D Texas Instruments
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.75 EUR |
| 10+ | 4.41 EUR |
| 100+ | 3.09 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.64 EUR |
| 2500+ | 2.56 EUR |
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Technische Details CSD86350Q5D Texas Instruments
Description: MOSFET 2N-CH 25V 40A 8LSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 13W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 8V, Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-LSON (5x6), Part Status: Active.
Weitere Produktangebote CSD86350Q5D nach Preis ab 2.7 EUR bis 7.12 EUR
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CSD86350Q5D | Texas Instruments |
 Description: MOSFET 2N-CH 25V 40A 8LSONPackaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 13W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 8V Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-LSON (5x6) Part Status: Active |
auf Bestellung 539 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD86350Q5D |
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auf Bestellung 1080 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD86350Q5D |
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Hersteller: Texas Instruments
Description: MOSFET 2N-CH 25V 40A 8LSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 8V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-LSON (5x6)
Part Status: Active
Description: MOSFET 2N-CH 25V 40A 8LSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 8V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-LSON (5x6)
Part Status: Active
auf Bestellung 539 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.12 EUR |
| 10+ | 4.66 EUR |
| 100+ | 3.27 EUR |
| 500+ | 2.7 EUR |
| CSD86350Q5D |
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auf Bestellung 1080 Stücke:
Lieferzeit 21-28 Tag (e)