CSD86360Q5D Texas Instruments

Description: MOSFET 2N-CH 25V 50A 8LSON, Part Status: Active, Supplier Device Package: 8-LSON (5x6), Vgs(th) (Max) @ Id: 2.1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5, Current - Continuous Drain (Id) @ 25°C: 50A, Drain to Source Voltage (Vdss): 25V, Power - Max: 13W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).