auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.93 EUR |
| 5000+ | 0.85 EUR |
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Technische Details CSD87313DMS Texas Instruments
Description: MOSFET 2N-CH 30V 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 8-WSON (3.3x3.3).
Weitere Produktangebote CSD87313DMS nach Preis ab 0.99 EUR bis 2.48 EUR
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CSD87313DMS | Hersteller : Texas Instruments |
 MOSFETs 30-V, N channel NexFET™ power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm 8-WSON -55 to 150 |
auf Bestellung 901 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87313DMS | Hersteller : Texas Instruments |
High Frequency Synchronous Power Module |
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CSD87313DMS | Hersteller : Texas Instruments |
30-V Dual N-Channel Power MOSFETs |
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CSD87313DMS | Hersteller : Texas Instruments |
30-V Dual N-Channel Power MOSFETs |
Produkt ist nicht verfügbar |
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CSD87313DMS | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 30V 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-WSON (3.3x3.3) |
Produkt ist nicht verfügbar |
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CSD87313DMS | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 30V 8WSON Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-WSON (3.3x3.3) |
Produkt ist nicht verfügbar |