CSD87334Q3D Texas Instruments
auf Bestellung 1658 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.66 EUR |
| 10+ | 1.18 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.79 EUR |
| 2500+ | 0.7 EUR |
| 5000+ | 0.68 EUR |
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Technische Details CSD87334Q3D Texas Instruments
Description: MOSFET 2N-CH 30V 20A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V, Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V, Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3).
Weitere Produktangebote CSD87334Q3D
| Foto | Bezeichnung | Hersteller | Beschreibung |
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CSD87334Q3D | Hersteller : Texas Instruments |
 High Frequency Synchronous Power Module |
Produkt ist nicht verfügbar |
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CSD87334Q3D | Hersteller : Texas Instruments |
Power Block 8-Pin VSON EP T/R |
Produkt ist nicht verfügbar |
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CSD87334Q3D | Hersteller : Texas Instruments |
Power Block 8-Pin VSON EP T/R |
Produkt ist nicht verfügbar |
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CSD87334Q3D | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 30V 20A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) |
Produkt ist nicht verfügbar |
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CSD87334Q3D | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 30V 20A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) |
Produkt ist nicht verfügbar |