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CSD87334Q3D

CSD87334Q3D Texas Instruments

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Hersteller: Texas Instruments
MOSFETs 30-V N channel sync hronous buck NexFET A 595-CSD87334Q3DT
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2+1.98 EUR
10+1.4 EUR
100+1.14 EUR
500+1 EUR
1000+0.94 EUR
2500+0.83 EUR
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Technische Details CSD87334Q3D Texas Instruments

Description: MOSFET 2N-CH 30V 20A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V, Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V, Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3).

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CSD87334Q3D CSD87334Q3D Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87334q3d Description: MOSFET 2N-CH 30V 20A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD87334Q3D CSD87334Q3D Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87334q3d Description: MOSFET 2N-CH 30V 20A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD87334Q3D suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87334q3d
CSD87334Q3D
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 20A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD87334Q3D suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd87334q3d
CSD87334Q3D
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 20A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH