CSD87335Q3D Texas Instruments
| Anzahl | Preis |
|---|---|
| 2+ | 2.25 EUR |
| 10+ | 1.49 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.05 EUR |
| 2500+ | 0.97 EUR |
| 5000+ | 0.92 EUR |
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Technische Details CSD87335Q3D Texas Instruments
Description: MOSFET 2N-CH 30V 8LSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 30V, Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-LSON (3.3x3.3), Part Status: Active.
Weitere Produktangebote CSD87335Q3D nach Preis ab 1.29 EUR bis 2.52 EUR
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CSD87335Q3D | Texas Instruments |
 Description: MOSFET 2N-CH 30V 8LSONPart Status: Active Supplier Device Package: 8-LSON (3.3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Drain to Source Voltage (Vdss): 30V Power - Max: 6W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) |
auf Bestellung 3654 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD87335Q3D |
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Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 8LSON
Part Status: Active
Supplier Device Package: 8-LSON (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 8LSON
Part Status: Active
Supplier Device Package: 8-LSON (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
auf Bestellung 3654 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 10+ | 1.83 EUR |
| 25+ | 1.66 EUR |
| 100+ | 1.47 EUR |
| 250+ | 1.38 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.29 EUR |