
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
2500+ | 1.02 EUR |
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Technische Details CSD87384M Texas Instruments
Description: MOSFET 2N-CH 30V 30A 5PTAB, Packaging: Tape & Reel (TR), Package / Case: 5-LGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, Rds On (Max) @ Id, Vgs: 7.7mOhm @ 25A, 8V, Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 5-PTAB (5x3.5), Part Status: Active.
Weitere Produktangebote CSD87384M nach Preis ab 1.02 EUR bis 2.76 EUR
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CSD87384M | Hersteller : Texas Instruments |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD87384M | Hersteller : Texas Instruments |
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auf Bestellung 1723 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87384M | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 5-LGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Rds On (Max) @ Id, Vgs: 7.7mOhm @ 25A, 8V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 5-PTAB (5x3.5) Part Status: Active |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87384M | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD87384M | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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![]() |
CSD87384M | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-LGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Rds On (Max) @ Id, Vgs: 7.7mOhm @ 25A, 8V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 5-PTAB (5x3.5) Part Status: Active |
Produkt ist nicht verfügbar |