CSD87502Q2T TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.3W; WSON6; 2x2mm
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NexFET™
Type of transistor: N-MOSFET
Mounting: SMD
Case: WSON6
Gate charge: 2.2nC
Dimensions: 2x2mm
On-state resistance: 35.5mΩ
Power dissipation: 2.3W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 5A
Polarisation: unipolar
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
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Technische Details CSD87502Q2T TEXAS INSTRUMENTS
Description: MOSFET 2N-CH 30V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V, Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active.
Weitere Produktangebote CSD87502Q2T nach Preis ab 0.7 EUR bis 1.78 EUR
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CSD87502Q2T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.3W; WSON6; 2x2mm Kind of package: reel; tape Kind of channel: enhancement Technology: NexFET™ Type of transistor: N-MOSFET Mounting: SMD Case: WSON6 Gate charge: 2.2nC Dimensions: 2x2mm On-state resistance: 35.5mΩ Power dissipation: 2.3W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 5A Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 274 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD87502Q2T | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 30V 5A 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87502Q2T | Hersteller : Texas Instruments |
MOSFETs 30-V N channel NexF ET power MOSFET du A 595-CSD87502Q2 |
auf Bestellung 6180 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87502Q2T | Hersteller : Texas Instruments |
Description: MOSFET 2N-CH 30V 5A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active |
auf Bestellung 12727 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87502Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R |
auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD87502Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R |
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CSD87502Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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CSD87502Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |