
CSD87502Q2T Texas Instruments

Description: MOSFET 2N-CH 30V 5A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
250+ | 0.96 EUR |
500+ | 0.92 EUR |
750+ | 0.9 EUR |
1250+ | 0.87 EUR |
1750+ | 0.86 EUR |
2500+ | 0.85 EUR |
6250+ | 0.82 EUR |
12500+ | 0.81 EUR |
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Technische Details CSD87502Q2T Texas Instruments
Description: MOSFET 2N-CH 30V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V, Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active.
Weitere Produktangebote CSD87502Q2T nach Preis ab 0.77 EUR bis 1.78 EUR
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CSD87502Q2T | Hersteller : Texas Instruments |
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auf Bestellung 6799 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87502Q2T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.3W; WSON6; 2x2mm Case: WSON6 Drain-source voltage: 30V Drain current: 5A On-state resistance: 35.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Dimensions: 2x2mm Gate charge: 2.2nC Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 274 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD87502Q2T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.3W; WSON6; 2x2mm Case: WSON6 Drain-source voltage: 30V Drain current: 5A On-state resistance: 35.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Dimensions: 2x2mm Gate charge: 2.2nC Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD87502Q2T | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V Rds On (Max) @ Id, Vgs: 32.4mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active |
auf Bestellung 12727 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87502Q2T | Hersteller : Texas Instruments |
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auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD87502Q2T | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD87502Q2T | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD87502Q2T | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |