CSD87503Q3ET Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 10A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
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Technische Details CSD87503Q3ET Texas Instruments
Description: MOSFET 2N-CH 30V 10A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 15.6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-VSON (3.3x3.3), Part Status: Active.
Weitere Produktangebote CSD87503Q3ET nach Preis ab 1.51 EUR bis 3.2 EUR
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CSD87503Q3ET | Texas Instruments |
MOSFETs 30-V Dual N-Channel MOSFET A 595-CSD8750 A 595-CSD87503Q3E |
auf Bestellung 1011 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD87503Q3ET | Texas Instruments |
Description: MOSFET 2N-CH 30V 10A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 15.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-VSON (3.3x3.3) Part Status: Active |
auf Bestellung 3593 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD87503Q3ET |
|
Hersteller: Texas Instruments
MOSFETs 30-V Dual N-Channel MOSFET A 595-CSD8750 A 595-CSD87503Q3E
MOSFETs 30-V Dual N-Channel MOSFET A 595-CSD8750 A 595-CSD87503Q3E
auf Bestellung 1011 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.95 EUR |
| 10+ | 1.98 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.51 EUR |
| CSD87503Q3ET |
|
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 10A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
Description: MOSFET 2N-CH 30V 10A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-VSON (3.3x3.3)
Part Status: Active
auf Bestellung 3593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.2 EUR |
| 10+ | 2.34 EUR |
| 25+ | 2.13 EUR |
| 100+ | 1.9 EUR |