CTLSH01-30 TR PBFREE Central Semiconductor
auf Bestellung 4941 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.77 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.21 EUR |
| 8000+ | 0.18 EUR |
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Technische Details CTLSH01-30 TR PBFREE Central Semiconductor
Description: DIODE SCHOTTK 30V 100MA TLM2D3D6, Packaging: Tape & Reel (TR), Package / Case: 0201 (0603 Metric), Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 7pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: TLM2D3D6, Operating Temperature - Junction: -65°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA, Current - Reverse Leakage @ Vr: 300 nA @ 10 V.
Weitere Produktangebote CTLSH01-30 TR PBFREE nach Preis ab 0.22 EUR bis 0.83 EUR
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CTLSH01-30 TR PBFREE | Hersteller : Central Semiconductor Corp |
 Description: DIODE SCHOTTK 30V 100MA TLM2D3D6Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: TLM2D3D6 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA Current - Reverse Leakage @ Vr: 300 nA @ 10 V |
auf Bestellung 5157 Stücke: Lieferzeit 10-14 Tag (e) |
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CTLSH01-30 TR PBFREE | Hersteller : Central Semiconductor Corp |
Description: DIODE SCHOTTK 30V 100MA TLM2D3D6 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: TLM2D3D6 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA Current - Reverse Leakage @ Vr: 300 nA @ 10 V |
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