CUHS20S40,H3F Toshiba
auf Bestellung 15707 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.80 EUR |
| 10+ | 0.50 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
Produktrezensionen
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Technische Details CUHS20S40,H3F Toshiba
Description: DIODE SCHOTTKY 40V 2A US2H, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 290pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: US2H, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A, Current - Reverse Leakage @ Vr: 300 µA @ 40 V.
Weitere Produktangebote CUHS20S40,H3F nach Preis ab 0.22 EUR bis 0.81 EUR
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CUHS20S40,H3F | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE SCHOTTKY 40V 2A US2HPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 40 V |
auf Bestellung 4188 Stücke: Lieferzeit 10-14 Tag (e) |
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CUHS20S40,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 40 V |
Produkt ist nicht verfügbar |