
auf Bestellung 10465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
17+ | 0.17 EUR |
19+ | 0.15 EUR |
6000+ | 0.12 EUR |
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Technische Details CUHS20S60,H3F Toshiba
Description: DIODE SCHOTTKY 60V 2A US2H, Packaging: Tape & Reel (TR), Package / Case: 2-SMD, Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 290pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: US2H, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A, Current - Reverse Leakage @ Vr: 650 µA @ 60 V.
Weitere Produktangebote CUHS20S60,H3F nach Preis ab 0.2 EUR bis 0.28 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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CUHS20S60,H3F | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V |
auf Bestellung 2456 Stücke: Lieferzeit 10-14 Tag (e) |
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CUHS20S60,H3F | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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CUHS20S60,H3F | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V |
Produkt ist nicht verfügbar |