CUS05S30,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE SCHOTTKY 30V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.057 EUR |
| 6000+ | 0.052 EUR |
| 9000+ | 0.047 EUR |
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Technische Details CUS05S30,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 55pF @ 0V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: USC, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA, Current - Reverse Leakage @ Vr: 150 µA @ 10 V.
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CUS05S30,H3F | Hersteller : Toshiba |
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CUS05S30,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 500MA USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA Current - Reverse Leakage @ Vr: 150 µA @ 10 V |
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CUS05S30,H3F діод Produktcode: 197017
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