CUS08F30,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 800MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 800 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.086 EUR |
| 6000+ | 0.077 EUR |
| 9000+ | 0.072 EUR |
| 15000+ | 0.067 EUR |
| 21000+ | 0.064 EUR |
| 30000+ | 0.062 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CUS08F30,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 800MA USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 170pF @ 0V, 1MHz, Current - Average Rectified (Io): 800mA, Supplier Device Package: USC, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 450 mV @ 800 mA, Current - Reverse Leakage @ Vr: 50 µA @ 30 V.
Weitere Produktangebote CUS08F30,H3F nach Preis ab 0.056 EUR bis 0.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CUS08F30,H3F | Hersteller : Toshiba |
Schottky Diodes & Rectifiers Single High-speed switching |
auf Bestellung 114907 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
CUS08F30,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 800MA USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 800 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
auf Bestellung 366586 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| CUS08F30,H3F | Hersteller : Toshiba |
DIODE SCHOTTKY 30V 800MA USC Група товару: Діоди та діодні збірки Од. вим: шт |
Produkt ist nicht verfügbar |