CUS10F40,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE SCHOTTKY 40V 1A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 74pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.09 EUR |
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Technische Details CUS10F40,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 74pF @ 0V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: USC, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A, Current - Reverse Leakage @ Vr: 20 µA @ 40 V.
Weitere Produktangebote CUS10F40,H3F nach Preis ab 0.11 EUR bis 0.48 EUR
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CUS10F40,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 74pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: USC Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V |
auf Bestellung 5650 Stücke: Lieferzeit 10-14 Tag (e) |
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CUS10F40,H3F | Hersteller : Toshiba |
Schottky Diodes & Rectifiers Sml-Signal Schottky Barrier Diode |
Produkt ist nicht verfügbar |