CUS10S30,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CUS10S30,H3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 135pF @ 0V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: USC, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA, Current - Reverse Leakage @ Vr: 500 µA @ 30 V.
Weitere Produktangebote CUS10S30,H3F nach Preis ab 0.15 EUR bis 0.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CUS10S30,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 135pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
auf Bestellung 14335 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CUS10S30,H3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 14335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 0.61 EUR |
| 57+ | 0.37 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |

