CUS10S30,H3F Toshiba
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CUS10S30,H3F Toshiba
Description: DIODE SCHOTTKY 30V 1A USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 135pF @ 0V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: USC, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA, Current - Reverse Leakage @ Vr: 500 µA @ 30 V.
Weitere Produktangebote CUS10S30,H3F nach Preis ab 0.053 EUR bis 0.85 EUR
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CUS10S30,H3F | Hersteller : Toshiba |
 Rectifier Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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CUS10S30,H3F | Hersteller : Toshiba |
Rectifier Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R |
auf Bestellung 3758 Stücke: Lieferzeit 14-21 Tag (e) |
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CUS10S30,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 135pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
auf Bestellung 249000 Stücke: Lieferzeit 21-28 Tag (e) |
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CUS10S30,H3F | Hersteller : Toshiba |
Rectifier Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R |
auf Bestellung 3758 Stücke: Lieferzeit 14-21 Tag (e) |
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CUS10S30,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 135pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
auf Bestellung 249681 Stücke: Lieferzeit 21-28 Tag (e) |
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CUS10S30,H3F | Hersteller : Toshiba |
Schottky Diodes & Rectifiers Single High-speed switching |
auf Bestellung 40046 Stücke: Lieferzeit 14-28 Tag (e) |
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CUS10S30,H3F | Hersteller : Toshiba |
Rectifier Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R |
Produkt ist nicht verfügbar |
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CUS10S30,H3F | Hersteller : Toshiba |
Rectifier Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R |
Produkt ist nicht verfügbar |
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CUS10S30,H3F | Hersteller : Toshiba |
Rectifier Diode Small Signal Schottky Si 30V 1A 2-Pin USC T/R |
Produkt ist nicht verfügbar |