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CWDM3011N TR13 PBFREE

CWDM3011N TR13 PBFREE Central Semiconductor Corp

CWDM3011N.PDF Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.41 EUR
Mindestbestellmenge: 2500
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Technische Details CWDM3011N TR13 PBFREE Central Semiconductor Corp

Description: MOSFET N-CH 30V 11A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V.

Weitere Produktangebote CWDM3011N TR13 PBFREE nach Preis ab 0.45 EUR bis 1.14 EUR

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Preis ohne MwSt
CWDM3011N TR13 PBFREE CWDM3011N TR13 PBFREE Hersteller : Central Semiconductor Corp CWDM3011N.PDF Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 4383 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.14 EUR
18+ 0.98 EUR
100+ 0.73 EUR
500+ 0.58 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 16
CWDM3011N TR13 PBFREE CWDM3011N TR13 PBFREE Hersteller : Central Semiconductor CWDM3011N.PDF MOSFET N-Ch Enh Mode FET 30Vds 20Vgs 2.5W
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