CY14B104NA-BA45XIT Infineon Technologies
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Technische Details CY14B104NA-BA45XIT Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA, Packaging: Tape & Reel (TR), Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 48-FBGA (6x10), Write Cycle Time - Word, Page: 45ns, Memory Interface: Parallel, Access Time: 45 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote CY14B104NA-BA45XIT
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CY14B104NA-BA45XIT | Hersteller : Infineon Technologies |
 NVRAM NVSRAM Parallel 4Mbit 3V 48-Pin FBGA T/R |
Produkt ist nicht verfügbar |
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| CY14B104NA-BA45XIT | Hersteller : INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Anzahl je Verpackung: 2000 Stücke |
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CY14B104NA-BA45XIT | Hersteller : Infineon Technologies |
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA Packaging: Tape & Reel (TR) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 48-FBGA (6x10) Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY14B104NA-BA45XIT | Hersteller : Infineon Technologies |
NVRAM 4Mb 3V 45ns 256K x 16 nvSRAM |
Produkt ist nicht verfügbar |
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| CY14B104NA-BA45XIT | Hersteller : INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 45ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC |
Produkt ist nicht verfügbar |