CY14B116S-BZ25XI Infineon Technologies
Hersteller: Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 512K x 32
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 165-FBGA (15x17)
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
| Anzahl | Preis |
|---|---|
| 1+ | 31.17 EUR |
| 10+ | 28.89 EUR |
| 25+ | 27.98 EUR |
| 50+ | 27.29 EUR |
| 105+ | 26.57 EUR |
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Technische Details CY14B116S-BZ25XI Infineon Technologies
Description: IC NVSRAM 16MBIT PAR 165FBGA, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 16Mbit, Mounting Type: Surface Mount, Package / Case: 165-LBGA, Packaging: Tray, DigiKey Programmable: Not Verified, Memory Organization: 512K x 32, Access Time: 25 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 25ns, Supplier Device Package: 165-FBGA (15x17), Memory Format: NVSRAM, Technology: NVSRAM (Non-Volatile SRAM), Voltage - Supply: 2.7V ~ 3.6V.
Weitere Produktangebote CY14B116S-BZ25XI
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CY14B116S-BZ25XI | Hersteller : Infineon Technologies |
Description: IC NVSRAM 16MBIT PAR 165FBGA Write Cycle Time - Word, Page: 25ns Supplier Device Package: 165-FBGA (15x17) Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 512K x 32 Access Time: 25 ns Memory Interface: Parallel |
Produkt ist nicht verfügbar |
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| CY14B116S-BZ25XI | Hersteller : Cypress Semiconductor |
NVRAM Non Volatile SRAMs |
Produkt ist nicht verfügbar |