CY62128ELL-55SXET Infineon Technologies
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
| Anzahl | Preis |
|---|---|
| 2+ | 9.89 EUR |
| 10+ | 9.21 EUR |
| 25+ | 8.94 EUR |
| 50+ | 8.73 EUR |
| 100+ | 8.52 EUR |
| 250+ | 8.24 EUR |
| 500+ | 8.04 EUR |
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Technische Details CY62128ELL-55SXET Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC, Packaging: Tape & Reel (TR), Package / Case: 32-SOIC (0.445", 11.30mm Width), Mounting Type: Surface Mount, Memory Size: 1Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 32-SOIC, Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 128K x 8, DigiKey Programmable: Not Verified.
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CY62128ELL-55SXET | Hersteller : Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOIC Packaging: Tape & Reel (TR) Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOIC Part Status: Active Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| CY62128ELL-55SXET | Hersteller : INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 55ns Case: SO32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
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