Technische Details CY7C1041D-10VXI CY
Description: IC SRAM 4MBIT PARALLEL 44SOJ, Memory Organization: 256K x 16, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns, Part Status: Obsolete, Technology: SRAM - Asynchronous, Voltage - Supply: 4.5V ~ 5.5V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 4Mbit, Mounting Type: Surface Mount, Package / Case: 44-BSOJ (0.400", 10.16mm Width), Packaging: Tube, DigiKey Programmable: Not Verified, Supplier Device Package: 44-SOJ, Memory Format: SRAM.
Weitere Produktangebote CY7C1041D-10VXI
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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CY7C1041D-10VXI | Infineon Technologies |
  Description: IC SRAM 4MBIT PARALLEL 44SOJMemory Organization: 256K x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Part Status: Obsolete Technology: SRAM - Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Packaging: Tube DigiKey Programmable: Not Verified Supplier Device Package: 44-SOJ Memory Format: SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CY7C1041D-10VXI | Cypress Semiconductor |
SRAM 4Mb 10ns 256K x 16 Fast Async SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY7C1041D-10VXI |
|
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Obsolete
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Supplier Device Package: 44-SOJ
Memory Format: SRAM
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Obsolete
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Supplier Device Package: 44-SOJ
Memory Format: SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1041D-10VXI |
|
Hersteller: Cypress Semiconductor
SRAM 4Mb 10ns 256K x 16 Fast Async SRAM
SRAM 4Mb 10ns 256K x 16 Fast Async SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH