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CY7C10612G30-10ZSXIT

CY7C10612G30-10ZSXIT Infineon Technologies


Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
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Technische Details CY7C10612G30-10ZSXIT Infineon Technologies

Description: IC SRAM 16MBIT PAR 54TSOP II, DigiKey Programmable: Not Verified, Memory Organization: 1M x 16, Access Time: 10 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 10ns, Supplier Device Package: 54-TSOP II, Memory Format: SRAM, Technology: SRAM - Asynchronous, Voltage - Supply: 3V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Volatile, Memory Size: 16Mbit, Mounting Type: Surface Mount, Package / Case: 54-TSOP (0.400", 10.16mm Width), Packaging: Tape & Reel (TR).

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CY7C10612G30-10ZSXIT CY7C10612G30-10ZSXIT Hersteller : Cypress Semiconductor Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files SRAM Async SRAMS
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